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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CBT3245APW-Q100

Octal bus switch

The CBT3245A-Q100 is an 8-pole, single-throw bus switch. The device features a single output enable input (OE) that controls eight switch channels. The switches are disabled when (OE) is HIGH. This device is fully specified for partial power down applications using IOFF.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 3) and is suitable for use in automotive applications.

此产品已停产

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 3)

    • Specified from -40 °C to +85 °C

  • 5 Ω switch connection between two ports

  • Direct interface with TTL levels

  • Overvoltage tolerant control inputs to 5.5 V

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 500 mA per JESD 78 Class II Level B

  • ESD protection:

    • MIL-STD-883, method 3015 exceeds 2000 V

    • HBM JESD22-A114F exceeds 2000 V

    • MM JESD22-A115B exceeds 150 V (C = 200 pF, R = 0 Ω)

  • DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
CBT3245APW-Q100 CBT3245APW-Q100J
(935300474118)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
CBT3245APW-Q100 CBT3245APW-Q100J CBT3245APW-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (3)

文件名称 标题 类型 日期
CBT3245A_Q100 Octal bus switch Data sheet 2022-03-21
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28
cbt3245a CBT3245A IBIS model IBIS model 2019-01-09

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
cbt3245a CBT3245A IBIS model IBIS model 2019-01-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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