可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74VHC595BQ-Q100 | 74VHC595BQ-Q100X | 935303191115 | SOT763-1 | 订单产品 |
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Click here for more information8-bit serial-in/serial-out or parallel-out shift register with output latches
The 74VHC595-Q100; 74VHCT595-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. 7A.
The 74VHC595-Q100; 74VHCT595-Q100 are 8-stage serial shift registers with a storage register and 3-state outputs. The shift registers have separate clocks.
Data is shifted on the positive-going transitions of the shift register clock input (SHCP). The data in each register is transferred to the storage register on a positive-going transition of the storage register clock input (STCP). If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register.
The shift register has a serial input (DS) and a serial standard output (Q7S) for cascading. It is also provided with asynchronous reset (active LOW) for all 8 shift register stages. The storage register has 8 parallel 3-state bus driver outputs. Data in the storage register appears at the output whenever the output enable input (OE) is LOW.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Balanced propagation delays
All inputs have Schmitt-trigger action
Inputs accept voltages higher than VCC
Input levels:
For 74VHC595-Q100: CMOS level
For 74VHCT595-Q100: TTL level
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 Ω)
Multiple package options
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
Serial-to-parallel data conversion
Remote control holding register
型号 | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|
74VHC595BQ-Q100 | Production | 2.0 - 5.5 | CMOS | ± 8 | 4 | 170 | low | -40~125 | 90 | 11.8 | 59 | DHVQFN16 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74VHC595BQ-Q100 | 74VHC595BQ-Q100X (935303191115) |
Active | VHC595 |
DHVQFN16 (SOT763-1) |
SOT763-1 | SOT763-1_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74VHC_VHCT595_Q100 | 8-bit serial-in/serial-out or parallel-out shift register with output latches | Data sheet | 2020-06-25 |
SOT763-1 | 3D model for products with SOT763-1 package | Design support | 2019-10-03 |
74vhc595 | 74vhc595 IBIS model | IBIS model | 2013-04-07 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DHVQFN16_SOT763-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; 16 terminals; 0.5 mm pitch; 3.5 mm x 2.5 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
SOT763-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 16 terminals; 0.5 mm pitch; 3.5 mm x 2.5 mm x 1 mm body | Package information | 2023-05-11 |
SOT763-1_115 | DHVQFN16; Reel pack, SMD, 7" Q1/T1 product orientation | Packing information | 2020-04-21 |
74VHC595BQ-Q100_Nexperia_Product_Reliability | 74VHC595BQ-Q100 Nexperia Product Reliability | Quality document | 2023-05-29 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74VHC595BQ-Q100 | 74VHC595BQ-Q100X | 935303191115 | Active | SOT763-1_115 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.